Fabrication, electrical transport mechanisms and photovoltaic properties of methyl violet 2B/n-Si hybrid organic/inorganic solar cell
Hybrid organic-inorganic heterojunction solar cell, Au/methyl violet 2B (MV2B)/n-Si/Al, was fabricated. The MV2B films were deposited by spin coating technique onto n-type silicon single crystal wafer substrate with orientation ‹100›. The current–voltage characteristics of the heterojunction diode have been studied at a temperature range of 300–368 K and the voltage applied during measurements varied from − 1 to 1 V. The device showed low series resistance of 518 Ω, high shunt resistance of 16 kΩ, rectification ratio of 33 at ± 1 V and ideality factor of 2.67 at room temperature. The I–V characteristics of the diode showed that the conduction mechanisms of the diode are controlled by the thermionic emission at forward voltage bias ≤ 0.3 V and Ohmic conduction in the voltage range 0.3 < V ≤ 1 V. The capacitance–voltage characteristics of the device were studied at room temperature in dark condition. Photovoltaic parameters of the solar cell under illumination have been determined as: The open circuit voltage (Voc), short circuit current (Isc), fill factor (FF) and power conversion efficiency (η) are 0.405 V, 0.15 mA, 0.29 and 2.37%; respectively.